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| FDS6675BZ P-Channel PowerTrench(R) MOSFET FDS6675BZ P-Channel PowerTrench(R) MOSFET -30V, -11A, 13m General Description This P-Channel MOSFET is producted using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. July 2008 tm Features Max rDS(on) = 13m at VGS = -10V, ID = -11A Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A Extended VGS range (-25V) for battery applications HBM ESD protection level of 5.4 KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings -30 25 -11 -55 2.5 1.2 1.0 -55 to 150 C W Units V V A Thermal Characteristics RJA RJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS6675BZ Device FDS6675BZ Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2008 Fairchild Semiconductor Corporation FDS6675BZ Rev. B1 1 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -20 -1 10 V mV/C A A On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V , ID = -11A Drain to Source On Resistance VGS = -4.5V, ID = -9A VGS = -10V, ID = -11A TJ = 125oC VDS = -5V, ID = -11A -1 -2 15.7 10.8 17.4 15.0 34 13.0 21.8 18.8 S m -3 V mV/C Forward Transconductance Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz 1855 335 330 2470 450 500 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = -15V, VGS = -10V, ID = -11A VDS = -15V, VGS = -5V, ID = -11A VDD = -15V, ID = -11A VGS = -10V, RGS = 6 3.0 7.8 120 60 44 25 7.2 11.4 10 16 200 100 62 35 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A Reverse Recovery Time Reverse Recovery Charge IF = -11A, di/dt = 100A/s IF = -11A, di/dt = 100A/s -0.7 -1.2 42 30 V ns nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b)105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS6675BZ Rev. B1 2 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 50 -ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS = - 10V VGS = - 5V VGS = - 4V VGS = - 4.5V VGS = - 3.5V DUTY CYCLE = 0.5%MAX VGS = - 10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = - 5V VGS = - 4.5V VGS = - 4V PULSE DURATION = 80s 40 30 20 10 0 VGS = - 3.5V VGS = - 3V 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 10 20 30 40 -ID, DRAIN CURRENT(A) 50 60 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 50 ID = -11A PULSE DURATION = 80s NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 ID = -11A 1.4 1.2 1.0 0.8 0.6 -80 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) VGS = -10V 40 30 DUTY CYCLE = 0.5%MAX TJ = 150oC 20 10 0 3.0 TJ = 25oC -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 4.5 6.0 7.5 9.0 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 60 -ID, DRAIN CURRENT (A) 50 40 30 20 10 0 2.0 TJ = 25oC TJ = -55oC Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC TJ = 25oC TJ = -55oC TJ = 150oC 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDS6675BZ Rev. B1 3 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 VDD = -10V VDD = -15V 4000 Ciss CAPACITANCE (pF) 1000 Coss VDD = -20V Crss f = 1MHz VGS = 0V 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 100 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 1000 100 10 -Ig(uA) TJ = 150oC Figure 8. Capacitance vs Drain to Source Voltage -IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC 1 0.1 0.01 1E-3 1E-4 0 5 10 15 20 -VGS(V) 25 30 35 TJ = 25oC TJ = 125oC 1 -2 10 10 10 10 tAV, TIME IN AVALANCHE(ms) -1 0 1 10 2 Figure 9. Ig vs VGS Figure 10. Unclamped Inductive Switching Capability 70 12 -ID, DRAIN CURRENT (A) 10 8 6 4 2 0 25 VGS = -10V -ID, DRAIN CURRENT (A) 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) VGS = -4.5V 100 ms 1s 10 s DC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 C o 50 75 100 125 150 0.01 0.01 0.1 1 10 100 200 TA, AMBIENT TEMPERATURE(oC) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area FDS6675BZ Rev. B1 4 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 P(PK), PEAK TRANSIENT POWER (W) 3 VGS = -10 V 10 2 10 1 SINGLE PULSE RJA = 125 oC/W TA = 25 oC 1 0.5 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RJA = 125 C/W o PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDS6675BZ Rev. B1 5 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FDS6675BZ Rev. B1 6 www.fairchildsemi.com |
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